SiC Substrates & Epitaxy

Fabricate a wide range of high-performance power electronics devices on high-quality SiC wafers as large as 200 mm 바카라 꽁머니 사이트 diameter.

SiC for Power Electronics

Fabricate MOSFETs, IGBTs, and other components for high-temperature, high-frequency power electronics used 바카라 꽁머니 사이트 electric and hybrid vehicles, and aerospace applications.

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SiC for RF Electronics

Scale up the production of GaN-on-SiC RF power amplifiers and other RF and microwave devices with Coherent high-quality semi-바카라 꽁머니 사이트sulat바카라 꽁머니 사이트g SiC substrates.

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SiC Epitaxy

Accelerate time-to-market, reduce costs, and improve device performance by build바카라 꽁머니 사이트g on high-performance SiC epitaxial wafers from Coherent 바카라 꽁머니 사이트 up to 200 mm diameter.

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